Micron to Spend $10 Billion on First US Memory Research Lab
Summary
- Micron said it will invest $10 billion over the next decade to build Micron Research Lab, a next-generation research facility in Boise, Idaho.
- The facility will be the first dedicated memory research hub in the US, focusing on next-generation memory technology, high-performance computing architectures and advanced semiconductor packaging.
- Industry participants view the R&D investment as aligning with the US push to revive the semiconductor industry and helping Micron catch up with Samsung Electronics and SK Hynix in the HBM market.
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Micron Technology said on Aug. 20 it will build a major memory research lab in Boise, Idaho, as it pushes to secure next-generation memory technology for the artificial intelligence era and narrow the gap with South Korean chipmakers.
The company plans to invest $10 billion over the next 10 years to establish Micron Research Lab, a next-generation facility that will employ hundreds of researchers. Construction will begin next year. The spending is a dedicated research-and-development budget, separate from the $250 billion Micron has already announced for manufacturing facilities.
The lab will be the first dedicated memory research hub in the US. It will focus on easing data-processing bottlenecks as AI adoption drives surging demand and on pushing beyond the theoretical limits of future semiconductors. Research areas include next-generation memory technology, high-performance computing architectures, advanced semiconductor packaging and future chip manufacturing processes.
Micron plans to use the Boise facility as a base to strengthen collaboration across the semiconductor ecosystem, linking customers, academia, government agencies and startups. It also intends to deepen ties with technology networks in Europe, Japan, India, Singapore and Taiwan.
Industry participants view the R&D investment as dovetailing with President Donald Trump's priority of reviving the US semiconductor industry, while also helping Micron close in on Samsung Electronics and SK Hynix in the high-bandwidth memory, or HBM, market.
"Today's decisions will determine who leads tomorrow's AI economy," Chief Executive Officer Sanjay Mehrotra said. "America's AI future will be built on memory made in the US."
The plan also drew support from the government and major customers. US Commerce Secretary Howard Lutnick called memory a core element of US technological leadership and said the research investment would strengthen domestic innovation and create high-quality jobs. Apple Chief Executive Officer Tim Cook also backed the R&D expansion, saying Micron has been an important partner that has brought innovation to Apple devices for more than 20 years.
Kim Chae-yeon, Hankyung.com reporter why29@hankyung.com
Korea Economic Daily
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